By B. Jayant Baliga
"Advanced energy MOSFET options" presents an in-depth therapy of the physics of operation of complex strength MOSFETs. Analytical types for explaining the operation of all of the complex energy MOSFETs are constructed and defined. the result of numerical simulations are supplied to offer extra perception into the gadget physics and validate the analytical types. the result of two-dimensional simulations also are given, to be able to corroborate the analytical types and provides additional perception into the machine operation. This quantity additionally: -Discusses units which can have an important impression on bettering the potency of the voltage-regulator-modules used to carry energy to microprocessors and photographs chips in laptops and servers -Covers functions in all reduce voltage circuits, specially the car electronics zone comprises numerical simulation examples to give an explanation for the working physics and validate the versions - bargains broad insurance of the position of silicon carbide within the layout and constitution of energy rectifiers "Advanced strength MOSFET suggestions" is a must-read for researchers and practising engineers within the strength machine industry.
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2 with its internal resistance components. There are eight resistances that must be analyzed in order to obtain the total on-resistance between the source and drain electrodes when the device is turned-on. It is customary to analyze not only the resistance for a particular cell design but also the specific resistance for each of the components by multiplying the cell resistance with the cell area. 1) Each of the resistances within the power D-MOSFET structure is analyzed below by using the procedure described in the textbook.
The drain-gate (reverse transfer) capacitance can be extracted by performing the numerical simulations with a small AC signal superposed on the DC drain bias voltage. The values obtained for the 30-V power D-MOSFET structure are shown in Fig. 24. The gate-to-drain and base-to-drain capacitances are shown in the figure for comparison. Both of these capacitances decrease with increasing drain bias voltage as expected from the analytical model. For this power D-MOSFET structure, the reverse transfer (gate-drain) capacitance is comparable in magnitude to the output (base-drain) capacitance.
J. Baliga, “Silicon Carbide Power Devices”, World Scientific Press, Singapore, 2005. 3. J. Baliga, “Silicon RF Power Devices”, World Scientific Press, Singapore, 2005. 4. J. Baliga, “Modern Power Devices”, Wiley, New York, 1987. 5. J. Baliga, “Semiconductors for High Voltage Vertical Channel Field Effect Transistors”, Journal of Applied Physics, Vol. 53, pp. 1759–1764, 1982. 6. J. Baliga, et al, “Gallium Arsenide Schottky Power Rectifiers”, IEEE Transactions on Electron Devices, Vol. ED-32, pp.
Advanced Power MOSFET Concepts by B. Jayant Baliga