By P. Chu
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Operational principle of a SONOS Flash memory. (a) schematic of SONOS structure and (b) drain current versus gate voltage characteristics for two data states. The information is stored as a form of nitride trapped charges. The polarity and amount of charges stored in nitride layer determine the threshold voltages. The data is distinguished by measuring drain current flow at a given voltage. Once the charges are stored, the data is retained for over ten years so that the Flash memory is referred as nonvolatile memory.
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Advances in Solid-State Circuits Technologies by P. Chu