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Advances in Solid-State Circuits Technologies by P. Chu PDF

By P. Chu

ISBN-10: 9533070862

ISBN-13: 9789533070865

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Operational principle of a SONOS Flash memory. (a) schematic of SONOS structure and (b) drain current versus gate voltage characteristics for two data states. The information is stored as a form of nitride trapped charges. The polarity and amount of charges stored in nitride layer determine the threshold voltages. The data is distinguished by measuring drain current flow at a given voltage. Once the charges are stored, the data is retained for over ten years so that the Flash memory is referred as nonvolatile memory.

48, No. 10, (Oct. 2001) pp. 937-943, ISSN 0098-4094 Krummenacher F. & Joehl N. (2004). A 4-MHz CMOS continuous-time filter with on-chip automatic tuning, IEEE Journal of Solid-State Circuits, Vol. 23, No. 6, (Jun 2004) pp. ; R. G. Carvajal R. ; Lopez-Martin A. & Carlosena A. (2004). A novel low-voltage low-power class-AB linear transconductor, IEEE Proceedings of International Sympoisum of Circuits and Systems, Vol. 1, pp. 725-728, ISBN 0-7803-8251-X, Vancouver, British Columbia, Canada, May 2004, Institute of Electrical and Electronics Engineers, Piscataway Lee S.

175-176, ISSN 0013-5194 Nedungadi A. & Viswanathan T. R. (1984). 31, No. 10, (Oct. 1984) pp. 891-894, ISSN 0098-4094 Razavi B. (2001). Design of Analog CMOS Integrated Circuits, McGraw-Hill, ISBN 0-07-1188398, New York Seevinck E. & Wassenaar R. F. (1987). A versatile CMOS linear transconductor/Square-Law function circuit, IEEE Journal of Solid-State Circuits, Vol. 22, No. 6, (June 1987) pp. 366- 377, ISSN 0018-9200 Sengupta S. (2005). 52, No. 11, (Nov. 2005) pp. 2369-2375. ; Martinez-Heredia J.

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Advances in Solid-State Circuits Technologies by P. Chu


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